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2N7002-G

Comchip
Part Number 2N7002-G
Manufacturer Comchip
Description MOSFET
Published Apr 20, 2017
Detailed Description MOSFET 2N7002-G (N-Channel) RoHS Device Features Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D...
Datasheet PDF File 2N7002-G PDF File

2N7002-G
2N7002-G

Overview
MOSFET 2N7002-G (N-Channel) RoHS Device Features Power dissipation : 0.
35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.
056(1.
40) 0.
047(1.
20) 0.
044(1.
10) 0.
035(0.
90) 0.
119(3.
00) 0.
110(2.
80) D GS 0.
083(2.
10) 0.
066(1.
70) 0.
006(0.
15) 0.
002(0.
05) 0.
103(2.
60) 0.
086(2.
20) Maximum Ratings (at TA=25°C) Parameter Symbol Drain-Source voltage Drain current Power dissipation Junction and storage temperature VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW °C 0.
020(0.
50) 0.
013(0.
35) 0.
006(0.
15)max 0.
007(0.
20)min Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Drain-Source b...


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