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2N3762

Part Number	2N3762
Manufacturer	Central Semiconductor
Description	PNP SILICON TRANSISTOR
Published	May 23, 2017
Detailed Description	DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N37...
Datasheet	2N3762 PDF File

Overview

DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications.
MAXIMUM RATINGS (TA=25°C) SYMBOL 2N3762 2N3763 UNITS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 40 40 5.
0 1.
5 1.
0 4.
0 60 50 -65 to +200 175 44 V V V A W W °C °C/W °C/W SYMBOL TEST CONDITIONS 2N3762 MIN MAX 2N3763 MIN MAX UNITS IBL ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VCE=½Rated VCBO, VEB=2.
0V VCE=½Rated VCBO, VEB=2.
0V VCB=½Rated VCBO, VEB=2.
0V.
TA=100°C IC=10µA IC=10mA IE=10µA IC=10mA, IB=1.
0mA IC=150mA, IB=15mA IC=...

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