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2N3762

Part Number	2N3762
Manufacturer	Microsemi
Description	PNP SWITCHING SILICON TRANSISTOR
Published	May 23, 2017
Detailed Description	TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L 2N3763 2N3763...
Datasheet	2N3762 PDF File

Overview

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3762* 2N3764 2N3763* 2N3765 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current VCEO VCBO VEBO IC 40 60 40 60 5.
0 1.
5 2N3762* 1 2N3764 2 Vdc Vdc Vdc Adc Total Power Dissipation @ TA = +250C PT Operating & Storage Junction Temp.
Range Top, Tstg 2N3763* 2N3765 1.
0 0.
5 -55 to +200 W 0C THERMAL CHARACTERISTICS Characteristics Symbol Max.
Unit 2N3762* 2N3764 2N3763* 2N3765 Thermal Resistance Junction-to-Case RθJC 60 88 0C/W *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly at 5.
71 mW/0C for TA > +250C 2) Derate linearly at 2.
86 mW/0C for TA > +250C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHA...

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