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2N1711

CDIL
Part Number 2N1711
Manufacturer CDIL
Description NPN SILICON PLANAR TRANSISTOR
Published Jun 6, 2017
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR...
Datasheet PDF File 2N1711 PDF File

2N1711
2N1711

Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCER VCBO VEBO PD PD Tj, Tstg VALUE 50 75 7.
0 800 4.
57 3.
0 17.
15 - 65 to +200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCER VCBO VEBO IC=1mA, RBE <10 Ω IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=5V, IC=0 DC Current Gain hFE IC=0.
01mA, VCE=10V IC=0.
1mA, VCE=10V IC=10mA, VCE=10V IC=10mA, VCE=10V, Ta= ...


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