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2N1711

Philips
Part Number 2N1711
Manufacturer Philips
Description NPN medium power transistor
Published May 28, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supe...
Datasheet PDF File 2N1711 PDF File

2N1711
2N1711

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor FEATURES • High current (max.
500 mA) • Low voltage (max.
50 V).
APPLICATIONS • DC and wideband amplifiers.
DESCRIPTION NPN medium power transistor in a TO-39 metal package.
1 handbook, halfpage 2 2N1711 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.
1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 100 70 MIN.
MAX.
75 50 1 0.
8 300 − MHz V V A W UNIT 1997 May 28 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C Tcase ≤ 100 °C Tcase ≤ 25 °C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − − − − − − −65 − −65 MIN.
2N1711 MAX.
75 50 7 500 1 200 0.
8 1.
7 3 +150 200 +150 UNIT V V V mA A mA W W W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 219 58.
3 UNIT K/W K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC cur...


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