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2N1711

Microsemi
Part Number 2N1711
Manufacturer Microsemi
Description NPN LOW POWER SILICON TRANSISTOR
Published Jul 7, 2018
Detailed Description TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Leve...
Datasheet PDF File 2N1711 PDF File

2N1711
2N1711

Overview
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.
57 mW/0C for TA > 250C 2) Derate linearly 17.
2 mW/0C for TC > 250C Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 75 100 7.
0 500 0.
8 3.
0 -65 to +200 Max.
58 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc 2N1711, S 2N1890, S V(BR)CBO Collector-Emitter Breakdown Voltage RBE = 10 Ω, IC = 100 mAdc 2N1711, S 2N1890, S V(BR)CER Collector-Emitter Breakdown Voltage IC = 30 mAdc 2N1711, S 2N1890, S V(BR)CEO Emitter-Base Breakdown Voltage IE = 100 µAdc C...


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