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2N1711

STMicroelectronics
Part Number 2N1711
Manufacturer STMicroelectronics
Description SWITCHES AND UNIVERSAL AMPLIFIERS
Published May 28, 2005
Detailed Description 2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN trans...
Datasheet PDF File 2N1711 PDF File

2N1711
2N1711

Overview
2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case.
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Products approved to CECC 50002-104 available on request.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (R BE ≤ 10 Ω ) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 75 50 7 500 0.
8 3 1.
7 – 65 to 200 Unit V V V mA W W W °C 1/5 T s t g, T j January 1989 2N1613-2N1711 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 58 219 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Test Conditions V CB = 60 V V CB = 60 V V EB = 5 V T am b = 150 °C for 2N 16 13 for 2N 17 11 Min.
Typ.
Max.
10 10 10 5 Unit nA µA nA nA V Collector-base Breakdown I C = 0.
1 mA Voltage Collector-emitter Breakdown Voltage (R B E ≤ 10 Ω) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 10 mA 75 V (BR)CE R * 50 V V ( BR) V CE V BE EBO I E = 0.
1 mA I C = 150 mA I C = 150 mA for 2 N16 13 I C = 0.
01 mA I C = 0.
1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T amb = –55 °C for 2 N17 11 I C = 0.
01 mA I C = 0.
1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T amb = 55 °C I B = 15 mA I B = 15 mA 7 0.
5 0.
95 1.
5 1.
3 V V V (s at )* (s at ) * h F E* V CE V CE V CE V CE V CE V CE = = = = = = 10 10 10 10 10 10 V V V V V V 20...


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