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2N3767

Part Number	2N3767
Manufacturer	Central Semiconductor
Description	SILICON NPN POWER TRANSISTORS
Published	Jun 7, 2017
Detailed Description	2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR...
Datasheet	2N3767 PDF File

Overview

2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3766 80 2N3767 100 60 80 6.
0 4.
0 2.
0 25 -65 to +200 7.
0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VEB=1.
5V ICEO VCE=Rated VCEO IEBO VEB=6.
0V BVCEO IC=100mA (2N3766) 60 BVCEO IC=100mA (2N3767) 80 VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.
0A, IB=100mA VBE(ON) VCE10V, IC=1.
0A hF...

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