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BSS75

Part Number BSS75
Manufacturer Seme LAB
Title Bipolar PNP Device
Description BSS75 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Pack...
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BSS70 : SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. -40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0.95 BSS69 BSS70 C B VALUE -40 -40 -5 -200 -100 -50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE .

BSS70R : SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. -40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0.95 BSS69 BSS70 C B VALUE -40 -40 -5 -200 -100 -50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE .

BSS71 : SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for High Voltage Amplifier and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 200V VCEO Collector – Emitter Voltage 200V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 500mA PD Total Power Dissipation at TA = 25°C 500mW Derate Above 25°C 2.86mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max. 350 Units °C/W Semelab L.

BSS71 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector– Base Voltage Emitter– Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 200 Vdc 200 Vdc 6.0 Vdc 0.5 Adc 0.5 Watts 2.86 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 Watts 14.3 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC 70 ELECTRICAL CHARACTERISTICS (TA = 25°C u.

BSS71 : BSS71 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 200V IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/30m (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 50M Max. 200 0.5 250 0.5 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@seme.

BSS72 : BSS72 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 250V IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/30m (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 50M Max. 250 0.5 250 0.5 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@seme.

BSS72 : BSS71 BSS72 BSS73 CASE 79, STYLE 1 TO-18 (TO-206AA) HIGH VOLTAGE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @TqTotal Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO ic PD pd Tj. T stg BSS BSS BSS 71 72 73 200 250 300 200 250 300 6.0 0.5 0.5 2.86 2.5 14.3 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Symbol Rfuc Max 70 Unit °C/W ELECTRICAL CHARACTERISTICS (TA Charact.

BSS73 : BSS73 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 300 0.5 Units V A Hz @ 10/30m (VCE / IC) 40 50M 250 0.5 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@se.

BSS73 : BSS71 BSS72 BSS73 CASE 79, STYLE 1 TO-18 (TO-206AA) HIGH VOLTAGE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @TqTotal Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO ic PD pd Tj. T stg BSS BSS BSS 71 72 73 200 250 300 200 250 300 6.0 0.5 0.5 2.86 2.5 14.3 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Symbol Rfuc Max 70 Unit °C/W ELECTRICAL CHARACTERISTICS (TA Charact.

BSS73 : BSS73 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 300V IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/30m (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 50M Max. 300 0.5 250 0.5 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@seme.

BSS74 : LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME BSS74R HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation TAMB = 25°C Derate above 25°C TC = 25°C Derate above 25°C Operating Junction & Storage Temperature Range Thermal Resistance, Junction – Case 200V 20.

BSS74 : T MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol BSS BSS BSS 74 75 76 VCEO 200 250 300 VCBO 200 250 300 VEBO 5.0 ic 0.5 PD 0.5 2.86 pd Tj, s tg 2.5 14.3 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °c Symbol R»jc Max 70 Unit °C/W BSS74 BSS75 BSS76 CASE 79, STYLE 1 TO-18 (TO-206AA) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta.

BSS74 : The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC BSS74 200 200 BSS75 250 250 5.0 500 500 2.5 -65 to +200 350 70 BSS76 300 300 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO .

BSS74R : LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME BSS74R HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation TAMB = 25°C Derate above 25°C TC = 25°C Derate above 25°C Operating Junction & Storage Temperature Range Thermal Resistance, Junction – Case 200V 20.

BSS75 : T MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol BSS BSS BSS 74 75 76 VCEO 200 250 300 VCBO 200 250 300 VEBO 5.0 ic 0.5 PD 0.5 2.86 pd Tj, s tg 2.5 14.3 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °c Symbol R»jc Max 70 Unit °C/W BSS74 BSS75 BSS76 CASE 79, STYLE 1 TO-18 (TO-206AA) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta.

BSS75 : The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC BSS74 200 200 BSS75 250 250 5.0 500 500 2.5 -65 to +200 350 70 BSS76 300 300 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO .




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