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2N3700


Part Number 2N3700
Manufacturer TT
Title SILICON NPN TRANSISTOR
Description SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screeni...
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2N3700 : The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 140 80 7 1 0.5 1.8 1 – 65 to 200 Unit V V V A W W W °C 1/4 T s t g, T j January 1989 2N3700 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max.

2N3700 : 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT W 5.0 1.0 Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Jun.

2N3700 : TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 80 140 7.0 1.0 0.8 0.4 0.5 0.4 5.0 1.8 1.8 1.16 -55 to +175 Units Vdc Vdc Vdc Adc W W 0C TO-39* (TO-205AD) 2N3019, 2N3019S TO- 18* (TO-206AA) 2N3700 TO-46* (TO-206AB) 2N3057A 1) Derate linearly 4.6 m.

2N3700 : SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7.0V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 0.5W Derate Above TA = 25°C 2.9mW/°C TC = 25°C 1.0W Derate Above TC = 25°C 5.7mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Re.

2N3700 : This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications. The device features high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Lead Temperature (During Soldering, 1/16" from case, 60sec max.

2N3700 : 2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features  JANS Qualified to MIL-PRF-19500/391  2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057  Lightweight & Low Power  Ideal for Space, Military, & other High Reliability Applications  TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Volt.

2N3700 : The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 140 80 7.0 1.0 1.8 500 -65 to +200 350 97.2 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3700 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150.

2N3700 : at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS’ PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELAT.

2N3700 : NPN 2N3700 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are intended for small signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° www.DataSheet.net/ Value 80 140 7 1 0.5 1.8 1 200 -65 to +200 Unit V V V A W °C °C @ Tcase100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal R.

2N3700 : SYMBOL VALUE Collector -Base Voltage VCBO 140 Collector -Emitter Voltage VCEO 80 Emitter -Base Voltage VEBO 7.0 Collector Current IC 1.0 Power Dissipation @Ta=25 deg C PD 500 Derate Above 25 deg C 2.85 @TC=25 deg C PD 1.8 Derate Above 25 deg C 10.6 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 70 Junction to Ambient Rth(j-a) 245 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Collector-Cut off Current ICBO VCB=90V, IE=0 - MAX 10 UNIT V V V A mW mW/deg C W mW/deg C deg C deg C/W deg C/W UNIT nA Emitter-Cut off Current Coll.

2N3700DCSM : LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3700DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH VOLTAGE A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1.

2N3700HR : The 2N3700HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/004 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number 2N3700RUBx 2N3700UBx SOC3700RHRx SOC3700HRx Product summary ESCC specification 5201/004 See Tab.

2N3700S : TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 80 140 7.0 1.0 0.8 0.4 0.5 0.4 5.0 1.8 1.8 1.16 -55 to +175 Units Vdc Vdc Vdc Adc W W 0C TO-39* (TO-205AD) 2N3019, 2N3019S TO- 18* (TO-206AA) 2N3700 TO-46* (TO-206AB) 2N3057A 1) Derate linearly 4.6 m.

2N3700UB : 2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features  JANS Qualified to MIL-PRF-19500/391  2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057  Lightweight & Low Power  Ideal for Space, Military, & other High Reliability Applications  TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Volt.

2N3700UB : at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS’ PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELAT.

2N3701 : The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 140 80 7.0 1.0 1.8 500 -65 to +200 350 97.2 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3700 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150.




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