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IRF630

Inchange Semiconductor
Part Number IRF630
Manufacturer Inchange Semiconductor
Description N-channel mosfet transistor
Published Jul 9, 2017
Detailed Description MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance ...
Datasheet PDF File IRF630 PDF File

IRF630
IRF630

Overview
MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.
4 ;I D=9A 1.
gate 2.
drain 3.
source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max.
Operating Junction temperature Storage temperature RATING 200 20 9 74 150 -65~150 UNIT V V A W 123 TO-220 ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER V(BR)DSS Drain-source breakdown voltage CONDITIONS VGS=0; ID=0.
25mA VGS(TH) Gate threshold voltage VDS= VGS; ID=1mA RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.
4A IGSS Gate source leakage current VGS=20V ;VDS=0 IDSS Zero gate voltage drain current VDS=200V; VGS=0 VSD Diode forward voltage IF=9A; VGS=0 MIN MAX UNIT 200 V 2 4V 400 m 100 nA 10 uA 1.
2 V ...


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