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IRF640

WEITRON
Part Number IRF640
Manufacturer WEITRON
Description N-Channel Enhancement Mode POWER MOSFET
Published Jul 9, 2017
Detailed Description N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For...
Datasheet PDF File IRF640 PDF File

IRF640
IRF640

Overview
N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.
18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance 2 SOURCE IRF640 DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 200 VOLTAGE 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE TO-220AB Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current Total Power Dissipation(TC=25˚C) Thermal Resistance Junction-case Thermal Resistance Junction-ambient Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJC RθJA TJ Tstg Value 200 ±20 18 11 72 125 1 62 +150 - 55~+150 Unit V A W ˚C/W ˚C/W ˚C ˚C WEITRON http://www.
weitron.
com.
tw 1/6 04-Nov-08 IRF640 Electrical...


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