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IRF640

Inchange Semiconductor
Part Number IRF640
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 9, 2017
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640 DESCRIPTION ·Drain Current –ID...
Datasheet PDF File IRF640 PDF File

IRF640
IRF640


Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.
0 62.
5 ℃/W ℃/W isc Website:www.
iscsemi.
cn INCHANGE Semiconductor isc N-Channel Mos...



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