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2SA812

Part Number	2SA812
Manufacturer	GME
Description	Silicon Epitaxial Planar Transistor
Published	Jul 15, 2017
Detailed Description	Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current g...
Datasheet	2SA812 PDF File

Overview

Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623.
z High DC current gain:hFE=200typ.
(VCE=-6.
0V,IC=-1.
0mA) z High Voltage: VCEO=-50V.
Pb Lead-free 2SA812 APPLICATIONS z Audio frequency, general purpose amplifier.
ORDERING INFORMATION Type No.
Marking 2SA812 M4/M5/M6/M7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ E010 Rev.
A www.
gmicroelec.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SA812 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -60 V Collector-emitte...

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