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2SA812

WEITRON
Part Number 2SA812
Manufacturer WEITRON
Description PNP Transistor
Published Jul 15, 2017
Detailed Description PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Bas...
Datasheet PDF File 2SA812 PDF File

2SA812
2SA812

Overview
PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -60 -50 -5.
0 -100 200 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.
weitron.
com.
tw 1/3 08-Dec-06 2SA812 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC = -100µA, IE = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= 100µA, IC=0 Collector Cutoff Current VCB = -60V, IE = 0A Emitter Cutoff Current VEB = -5V, IC = 0A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -60 -50 -5.
0 - Typ Max Unit - -V - -V - -V - -0.
1 µA - -0.
1 µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA Collector-Emitter Voltage IC = -1mA, VCE = -6V, DC Cu...


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