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2SA812

HOTTECH
Part Number 2SA812
Manufacturer HOTTECH
Description PNP Transistor
Published Jul 15, 2017
Detailed Description Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) H...
Datasheet PDF File 2SA812 PDF File

2SA812
2SA812

Overview
Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.
(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -60 VCEO -50 VEBO -5 IC -100 PC 200 TJ 150 Tstg -55 to +150 Unit V V V mA mW 1.
BASE 2.
EMITTER 3.
COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=-100μA, IE=0 Collector-emitter breakdown voltage Emitter-base breakdown voltage VCEO VEBO IC= -1mA, IB=0 IE= -100μA, IC=0 Collector cut-off current ICBO VCB=- 60 V, IE=0 Emitter cut-off current IEBO VEB= -5V, IC=0 DC current gain hFE VCE=- 6V, IC= -1mA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB...


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