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2SA812

Kexin
Part Number 2SA812
Manufacturer Kexin
Description PNP Transistors
Published Jul 15, 2017
Detailed Description SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA...
Datasheet PDF File 2SA812 PDF File

2SA812
2SA812

Overview
SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP.
(VCE = -6.
0 V, IC = -1.
0 mA) High Voltage: VCEO = -50 V +0.
12.
4 -0.
1 SOT-23 2.
9 +0.
1 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
1 +0.
11.
3 -0.
1 0.
55 0.
4 Unit: mm 0.
1 +0.
05 -0.
01 +0.
10.
97 -0.
1 1.
Base 2.
Emitter 3.
collector 0-0.
1 +0.
10.
38 -0.
1 Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -5.
0 -100 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage Base to emitter voltage Output capacitance Transition frequency * Pulsed: PW 350 u s, Duty Cycle 2% Symbol Testconditi ons ICBO VCB = -60 V, IE = 0 A IEBO VEB = -5.
0 V, IC = 0 A hFE VCE = -6...


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