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2SA812

Part Number	2SA812
Manufacturer	JCET
Description	PNP Transistor
Published	Jul 15, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATU...
Datasheet	2SA812 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.
(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V SOT-23 1.
BASE 2.
EMITTER 3.
COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -5 -100 200 150 -55-150 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)E...

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