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KSE182

Samsung
Part Number KSE182
Manufacturer Samsung
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Aug 21, 2017
Detailed Description KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWIT...
Datasheet PDF File KSE182 PDF File

KSE182
KSE182

Overview
KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC TJ TSTG Rating 60 80 100 40 60 80 7 3 6 1 1.
5 12.
5 150 -65 ~ 150 Unit V V V V V V V A A A W W   1.
Emitter 2.
Collector 3.
Base ELECTRICAL CHARACTERISTICS (Tc=25 ) Characteristic Collector Emitter Sustaining Voltage : KSE180 : KSE181 : KSE182 Collector Cutoff Current : KSE180 : KSE181 : KSE182 : KSE180 : KSE181 : KSE182 Emitter Cutoff Current DC Current Gain Symbol VCEO(sus) ICBO IEBO hFE Collector Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Vo...


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