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KSE13006

Fairchild Semiconductor
Part Number KSE13006
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Apr 5, 2005
Detailed Description KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regu...
Datasheet PDF File KSE13006 PDF File

KSE13006
KSE13006


Overview
KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 2.
Collector 3.
Emitter 1.
Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : KSE13006 : KSE13007 : KSE13006 : KSE13007 Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.
4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.
4A IC = 5A, IB = 1A VCB = 10V, f = 0.
1MHz VCE = 10V, IC = 0.
5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.
6 3 0.
7 110 8 5 Min.
300 400 1 60 30 1 2 3 1.
2 1.
6 V V V V V pF MHz µs µs µs Typ.
Max.
Units V V mA IEBO hFE VCE(sat) VBE (sat) Cob fT tON tSTG tF *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% ©2000 Fairchild Semiconductor International Rev.
A1, December 2000 KSE13006/13007 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE = 5V IC = 3 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 0.
1 V CE(sat) 1 0.
1 1 10 0.
01 0.
1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1000 Cob[pF], OUTPUT CAPACITANCE tR, tD [µ s], TURN ON TIME 100 tR 100 10 tD, V BE(off)=5V VCC =125V IC=5IB 1 ...


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