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KSE13005F

Fairchild Semiconductor
Part Number KSE13005F
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Apr 5, 2005
Detailed Description KSE13005F KSE13005F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and ...
Datasheet PDF File KSE13005F PDF File

KSE13005F
KSE13005F

Overview
KSE13005F KSE13005F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 2.
Collector 3.
Emitter 1.
Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 4 8 2 30 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Base Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.
2A IC = 2A, IB = 0.
5A IC = 4A, IB = 1A IC = 1A, IB = 0.
2A IC = 2A, IB = 0.
5A VCB = 10V , f = 0.
1MHz VCE = 10V, IC = 0.
5A VCC =125V, IC = 2A IB1 = - IB2 = 0.
4A RL = 125Ω 4 0.
8 4 0.
9 65 10 8 Min.
400 Typ.
Max.
1 60 40 0.
5 0.
6 1 1.
2 1.
6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev.
A1, January 2001 KSE13005F Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE = 5V IC = 4 IB hFE, DC CURRENT GAIN 1 V BE(sat) 10 0.
1 VCE(sat) 1 0.
01 0.
1 1 10 0.
01 0.
01 0.
1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 V CC=125V IC=5IB IB1= -IB2 Cob[pF], CAPACITANCE tR, tD [µ s], TURN ON TIME 100 1 tR 0.
1 10 tD, VBE(off)=5V 1 0.
1 1 10 100 1000 0.
01 0.
01 0.
1 1 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], CO...


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