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KSE13003T

Fairchild Semiconductor
Part Number KSE13003T
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Apr 5, 2005
Detailed Description KSE13003T KSE13003T High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and...
Datasheet PDF File KSE13003T PDF File

KSE13003T
KSE13003T


Overview
KSE13003T KSE13003T High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 2.
Collector 3.
Emitter 1.
Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.
5 3 0.
75 30 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Voltage Test Condition IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.
5A VCE = 2V, IC =1A IC = 0.
5A, IB = 0.
1A IC = 1A, IB = 0.
25A IC = 1.
5A, IB = 0.
5A IC = 0.
5A, IB = 0.
1A IC = 1A, IB = 0.
25A VCB = 10V , f = 0.
1MHz VCE = 10V, IC = 0.
1A VCC =125V, IC = 1A IB1 = 0.
2A, IB2 = - 0.
2A RL = 125Ω 4 1.
1 4.
0 0.
7 21 8 5 Min.
400 Typ.
Max.
10 40 0.
5 1 3 1 1.
2 V V V V V pF MHz µs µs µs Units V µA VBE(sat) Cob fT tON tSTG tF *Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2002 Fairchild Semiconductor Corporation Rev.
B, December 2002 KSE13003T Typical Characteristics 2.
0 100 IC[A], COLLECTOR CURRENT VCE = 2V 1.
6 hFE, DC CURRENT GAIN IB = 500mA IB = 450mA IB = 400mA 1.
2 IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA 10 0.
8 1 0.
4 IB = 0mA 0.
0 0 1 2 3 4 5 0.
1 0.
01 0.
1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 4 IB tSTG 1 tSTG, tF[µs], TIME VBE(sat) 1 tF 0.
1 0.
1 VCE(sat) 0.
01 0.
01 0.
1 1 10...


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