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K9F1G08U0M

Samsung semiconductor
Part Number K9F1G08U0M
Manufacturer Samsung semiconductor
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Published Sep 26, 2017
Detailed Description www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M ...
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K9F1G08U0M
K9F1G08U0M


Overview
www.
DataSheet4U.
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0 1.
Initial issue Draft Date July.
5.
2001 Remark Advance 0.
1 1.
Iol(R/B) of 1.
8V is changed.
- min.
value : 7mA --> 3mA - Typ.
value : 8mA --> 4mA Nov.
5.
2001 2.
AC parameter is changed.
tRP(min.
) : 30ns --> 25ns 3.
A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
Dec.
4.
2001 0.
2 1.
ALE status fault in ’Random data out in a page’ timing diagram(page 19) is fixed.
0.
3 1.
tAR1, tAR2 are merged to tAR.
(Page11) (Before revision) min.
tAR1 = 10ns , min.
tAR2 = 50ns (After revision) min.
tAR = 10ns 2.
min.
tCLR is changed from 50ns to 10ns.
(Page11) 3.
min.
tREA is cha...


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