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BUT11XI

Part Number	BUT11XI
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-volt...
Datasheet	BUT11XI PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
2.
5 80 MAX.
1000 450 5...

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