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BUZ50A

ETC
Part Number BUZ50A
Manufacturer ETC
Description HIGH VOLTAGE POWER MOSFET
Published Mar 23, 2005
Detailed Description www.DataSheet4U.com PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (...
Datasheet PDF File BUZ50A PDF File

BUZ50A
BUZ50A

Overview
www.
DataSheet4U.
com PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC.
3131 S.
E.
JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.
semi-tech-inc.
com CASE OUTLINE: TO-220AB TYPE: BUZ50A HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case ELECTRICAL CHARACTERISTICS TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS VGS = 0V, ID = .
25mA Breakdown Voltage Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.
0mA Gate – Body Leakage Current Zero Gate Voltage Drain Current On State Drain Current IGSS IDSS ID(on) rDS(on) gFS VDS(on) VDS(on) Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1 MHz 2100 120 50 VGS = 10V, ID = 1.
5A VDS = 25V, ID = 1.
5A 0.
7 5.
0 VGS = ± 20V, VDS = 0V VDS = 1000V, VGS = 0V, VDS = 1000V, VGS = 0V, TJ = 125°C...


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