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BUZ51

Siemens Semiconductor Group
Part Number BUZ51
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description www.DataSheet4U.com BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2...
Datasheet PDF File BUZ51 PDF File

BUZ51
BUZ51

Overview
www.
DataSheet4U.
com BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.
4 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1344-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.
4 Unit A ID IDpuls 13.
5 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax IAR EAR EAS 3.
4 12 mJ L = 67 mH, Tj = 25 °C .
co ID = 3.
4 A, VDD = 50 V, RGS = 25 Ω 410 m Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse 4U Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C eet Operating temperature Sh Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤1 75 E 55 / 150 / 56 °C K/W Storage temperature ww w.
D ata Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Semiconductor Group 07/96 www.
DataSheet4U.
com BUZ 51 Elec...


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