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BUZ50C

Siemens Semiconductor Group
Part Number BUZ50C
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description www.DataSheet4U.com BUZ 50 C SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Typ...
Datasheet PDF File BUZ50C PDF File

BUZ50C
BUZ50C

Overview
www.
DataSheet4U.
com BUZ 50 C SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 C VDS 1000 V ID 2.
3 A RDS(on) 6Ω Package TO-220 AB Ordering Code C67078-A1307-A5 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.
3 TC = 25 °C Pulsed drain current IDpuls 9 TC = 25 °C m .
co Gate source voltage Power dissipation VGS Ptot ± 20 78 V W TC = 25 °C 4U Operating temperature eet Tj Tstg RthJC RthJA -55 .
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+ 150 °C -55 .
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+ 150 ≤ 1.
6 75 C 55 / 150 / 56 K/W Storage temperature Thermal resistance, chip to ambient ww w.
D ata DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Sh Thermal resistance, chip case Semiconductor Group 1 07/96 www.
DataSheet4U.
com BUZ 50 C Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source bre...


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