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BSN205A

NXP
Part Number BSN205A
Manufacturer NXP
Description N-channel Transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSN205; BSN205A N-channel enhancement mode vertical D-MOS transistor Product specifi...
Datasheet PDF File BSN205A PDF File

BSN205A
BSN205A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSN205; BSN205A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope.
Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line and high speed transformer drivers etc.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown • Low RDS(on) PINNING - TO-92 VARIANT BSN205 1 2 3 PIN CONFIGURATION = gate = drain = source 1 2 3 QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 400 mA; VGS = 10 V Transfer admittance ID = 400 mA; VDS = 25 V Ptot BSN205; BSN205A VDS ± VGSO ID max.
max.
max.
max.
typ.
max.
200 V 20 V 300 mA 1 W 4.
5 Ω 6 Ω 200 mS 350 mS RDS(on)  Yfs  min.
typ.
BSN205A = source = gate = drain handbook, halfpage d 1 2 3 g s MAM148 Note: various pinout configurations available.
Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a VDS BSN205; BSN205A max.
max.
max.
max.
max.
max.
200 V 20 V 300 mA 1.
2 A 1 W 150 °C ± VGSO ID IDM Ptot Tstg Tj −65 to + 150 °C = 125 K/W 1.
Transistor mounted on printed-circuit board, max.
lead length 4 mm, mounting pad for drain lead min.
10 mm × 10 ...


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