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BSN20W

NXP
Part Number BSN20W
Manufacturer NXP
Description N-channel Transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor ...
Datasheet PDF File BSN20W PDF File

BSN20W
BSN20W

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon Ptot Note 1.
Device mounted on a printed-circuit board.
PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation Tamb ≤ 25 °C; note 1 CONDITIONS 50 1.
8 80 15 200 MAX.
V V g 1 Top view 2 MAM356 BSN20W PINNING - SOT323 PIN 1 2 3 SYMBOL g s d DESCRIPTION gate source drain handbook, halfpage 3 d s Marking code: M8- = made in Hong Kong; M8t = made in Malaysia (or Bangkok).
Fig.
1 Simplified outline and symbol.
UNIT mA Ω mW 2000 Mar 10 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VDS VGSO ID IDM Ptot Tstg Tj Note 1.
Device mounted on a printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625 PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature Tamb ≤ 25 °C; note 1 open drain CONDITIONS − − − − − −65 −65 MIN.
BSN20W MAX.
50 ±20 80 300 200 +150 +150 V V UNIT mA mA mW °...


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