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BSO303SP

Infineon Technologies AG
Part Number BSO303SP
Manufacturer Infineon Technologies AG
Description OptiMOS -P Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BSO303SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 15...
Datasheet PDF File BSO303SP PDF File

BSO303SP
BSO303SP

Overview
Preliminary data BSO303SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -30 21 -8.
9 V mΩ A 8 7 6 5 D D D D SIS00062 Type BSO303SP Package SO 8 Ordering Code Q67042-S4129 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.
9 -7.
1 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -35.
6 97 -6 ±20 2.
35 -55.
.
.
+150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.
9 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.
9A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-08 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering poin...


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