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BSO303P

Infineon Technologies AG
Part Number BSO303P
Manufacturer Infineon Technologies AG
Description Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BSO303P OptiMOS-P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Logic Level ...
Datasheet PDF File BSO303P PDF File

BSO303P
BSO303P

Overview
Preliminary data BSO303P OptiMOS-P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -30 21 -8.
2 V mΩ A D1 D1 D2 D2 SIS00070 Type BSO303P Package SO 8 Ordering Code Q67042-S4010 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.
2 -6.
6 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -32.
4 97 -6 ±20 2 -55.
.
.
+150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.
2 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.
2A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-08 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min.
footprint, t < 10s @ 6 cm 2 cooling area 1) BSO303P Symbol min.
RthJS RthJA - Values typ.
max.
50 110 62.
5 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -30 -1 Values typ.
-1.
5 max.
-2 Unit V Gate threshold voltage, VGS = VDS ID =-100µA Zero gate voltage drain current VDS =-30V, VGS =0, Tj =25°C VDS =-30V, VGS =0, Tj =150°C µA -0.
1 -10 -10 26 18 -1 -100 -100 32 21 nA mΩ Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.
5V, ID =-6.
6A Drain-source on-state resistance VGS =-10V, ID =-8.
2A 1Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air; t ≤10 sec.
Page 2 2002-01-08 Preliminary data Electrical Characteristics , at Tj = 25 °C, un...


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