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BSO303

Infineon Technologies AG
Part Number BSO303
Manufacturer Infineon Technologies AG
Description OptiMOS -P Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BSO303P OptiMOS-P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Logic Level ...
Datasheet PDF File BSO303 PDF File

BSO303
BSO303

Overview
Preliminary data BSO303P OptiMOS-P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -30 21 -8.
2 V mΩ A D1 D1 D2 D2 SIS00070 Type BSO303P Package SO 8 Ordering Code Q67042-S4010 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.
2 -6.
6 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -32.
4 97 -6 ±20 2 -55.
.
.
+150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.
2 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.
2A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-08 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - solder...


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