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BSS135

Siemens Semiconductor Group
Part Number BSS135
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Published Mar 23, 2005
Detailed Description SIPMOS® Small-Signal Transistor BSS 135 q q q q q q q VDS 600 V ID 0.080 A RDS(on) 60 Ω N channel Depletion mode High...
Datasheet PDF File BSS135 PDF File

BSS135
BSS135

Overview
SIPMOS® Small-Signal Transistor BSS 135 q q q q q q q VDS 600 V ID 0.
080 A RDS(on) 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 G 2 D 3 S SS135 Package TO-92 BSS 135 Q67000-S237 E6325: 2000 pcs/carton; Ammopack Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 42 ˚C Pulsed drain current, Max.
power dissipation, Symbol Values 600 600 ± 14 ± 20 0.
080 0.
24 1.
0 – 55 … + 150 ≤ 125 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA – – A W ˚C K/W – TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 04.
97 BSS 135 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.
25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 600 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.
01 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.
01 A Input capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) Values typ.
max.
Unit V(BR)DSS 600 – − 1.
5 – − 0.
7 V VGS(th) IDSS − 1.
8 – – – – 10 40 100 200 100 nA µA nA IGSS – RDS(on) – 60 Ω gfs 0.
01 0.
04 110 8 3 4 10 15 20 – S pF – 150 12 5 6 15 20 30 ns Ciss Coss – Crss – td(on) tr td(off) tf – – – – VDD = 30 V, VGS = − 3 V .
.
.
+ 5 V, RGS = 50 Ω, ID = 0.
2 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V,...


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