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BSS159

Siemens Semiconductor Group
Part Number BSS159
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Published Mar 23, 2005
Detailed Description BSS 159 Preliminary data SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin ...
Datasheet PDF File BSS159 PDF File

BSS159
BSS159

Overview
BSS 159 Preliminary data SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 G Type BSS 159 Pin 2 S Pin 3 D VDS 50 V ID 0.
16 A RDS(on) 8Ω Package SOT-23 Ordering Code Q67050-T6 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage, aperiodic Continuous drain current ± 14 ± 20 A 0.
16 TA = 25 °C DC drain current, pulsed IDpuls 0.
48 TA = 25 °C Power dissipation Ptot 0.
36 W -55 .
.
.
+ 150 °C -55 .
.
.
+ 150 ≤ 350 ≤ 285 TA = 25 °C Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate - reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJSR K/W E 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.
7 mm x 0.
7 mm.
Semiconductor Group 1 May-30-1996 BSS 159 Preliminary data Electri...


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