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BS108

Part Number	BS108
Manufacturer	Motorola Inc
Description	200 VOLTS N-CHANNEL TMOS
Published	Mar 23, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N–Channel Enh...
Datasheet	BS108 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers.
• Low Drive Requirement, VGS = 3.
0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of many Devices 2 GATE 3 SOURCE 1 2 3 200 VOLTS N–CHANNEL TMOS POWER FET LOGIC LEVEL CASE 29–04, STYLE 30 TO–92 MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage Drain Current Continuous(1) Pulsed(2) Total Power Dissipation @ TA = 25°...

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