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BFY50

Part Number	BFY50
Manufacturer	Seme LAB
Description	MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
Published	Mar 23, 2005
Detailed Description	BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER AMPLIFI...
Datasheet	BFY50 PDF File

Overview

BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.
89 (0.
35) 9.
40 (0.
37) 7.
75 (0.
305) 8.
51 (0.
335) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR Description 4.
19 (0.
165) 4.
95 (0.
195) 12.
70 (0.
500) min.
0.
89 max.
(0.
035) 7.
75 (0.
305) 8.
51 (0.
335) dia.
The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case.
they are intended for general purpose linear and switching applications 5.
08 (0.
200) typ.
2 1 0.
66 (0.
026) 1.
14 (0.
045) 0.
71 (0.
028) 0.
86 (0.
034) 2.
54 (0.
100) 3 45˚ TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PTOT Tstg,Tj Rj-case Rj-amb Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Collector Peak Current Total Power Dissipation @ Tamb £ 25°C @ Tcase £ 25°C Storage and Operatuing Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 80V 35V 6V 1A 1.
5A 0.
8W 5W –65 to 200°C 35°C / W 218°C / W Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
02/00 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO* V(BR)EBO* ICBO IEBO VCE(sat) VBE(sat) Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Test Conditions IC = 100mA IC = 100mA VCB = 60V VEB = 5V IC = 150mA IC = 1A IC = 150mA IC = 1A IC = 10mA IC = 150mA IC = 1mA IE = 0 IB = 0 IE = 100mA IE = 0 TC = 100°C IC = 0 TC = 100°C IE = 15mA IB = 0.
1A IB = 15mA IB = 0.
1A VCE = 10V VCE = 10V VCE = 10V Min.
80 35 6 Typ.
Max.
Unit V 50 2.
5 50 2.
5 nA m Collector – Emitter Breakdown Voltage IC = 30mA A A nA m 0.
14 0.
7 0.
95 1.
5 20 30 15 40 55 30 0.
2 1 1.
3 2 V V hFE* DC Current Gain — DYNAMIC CHARACTERIST...

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