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BFY51

Part Number	BFY51
Manufacturer	NXP
Description	NPN medium power transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product speciﬁcation Super...
Datasheet	BFY51 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product speciﬁcation NPN medium power transistors FEATURES • High current (max.
1 A) • Low voltage (max.
35 V).
APPLICATIONS • General purpose industrial applications.
DESCRIPTION NPN medium power transistor in a TO-39 metal package.
1 handbook, halfpage 2 BFY50; BFY51; BFY52 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.
1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 ICM Ptot hFE peak collector current total power dissipation DC current gain BFY50 BFY51 BFY52 fT transition frequency BFY50 BFY51; BFY52 IC = 50 mA; VCE = 10 V; f = 100 MHz 60 50 − − − − MHz MHz Tamb ≤ 25 °C Tcase ≤ 100 °C IC = 150 mA; VCE = 10 V 30 40 60 112 123 142 − − − open base − − − − − − − − − − − − 35 30 20 1 800 2.
86 V V V A mW W open emitter − − − − − − 80 60 40 V V V CONDITIONS MIN.
TYP.
MAX.
UNIT 1997 Apr 22 2 Philips Semiconductors Product speciﬁcation NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 VEBO IC ICM IBM Ptot emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C Tcase ≤ 25 °C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BFY50; BFY51; BFY52 MIN.
− − − − − − − − − − − − − −65 − −65 MAX.
80 60 40 35 30 20 6 1 1 100 800 5 2.
86 +150 200 +150 V V V V V V V A A UNIT mA mW W W °C °C °C 25 °C < Tcase < 100 °C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-...

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