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BLF861

NXP
Part Number BLF861
Manufacturer NXP
Description UHF power LDMOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Ph...
Datasheet PDF File BLF861 PDF File

BLF861
BLF861

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (UHF band).
APPLICATIONS • Communication transmitter applications in the UHF frequency range.
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap.
The common source is connected to the mounting flange.
3 Top view 4 MBK777 BLF861 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION 1 2 5 Fig.
1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION CW, class-AB PAL BG (TV), class-AB Notes 1.
Sync compression: input sync: ≥33%; output sync: 27 % LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN.
MAX.
65 ±15 18 318 +150 200 V V A W °C °C UNIT f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 typ.
170 (peak sync) Gp (dB) >14 >14 ηD (%) >50 >40 ∆Gp (dB) ≤1 note 1 1999 Aug 26 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 318 W BLF86...


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