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BLF871

NXP Semiconductors
Part Number BLF871
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
Published Dec 13, 2010
Detailed Description BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 Gener...
Datasheet PDF File BLF871 PDF File

BLF871
BLF871


Overview
BLF871; BLF871S UHF power LDMOS transistor Rev.
04 — 19 November 2009 Product data sheet 1.
Product profile 1.
1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The transistor can deliver 100 W broadband from HF to 1 GHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1.
Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit.
Mode of operation f PL PL(PEP) PL(AV) Gp ηD IMD3 (MHz) (W) (W) (W) (dB) (%) (dBc) CW, class AB 860 100 - - 21 60 - 2-tone, class AB f1 = 860; f2 = 860.
1 - 100 - 21 47 −35 DVB-T (8k OFDM) 858 -- 24 22 33 −34[1] PAR (dB) 8.
3[2] [1] Measured [dBc] with delta marker at 4.
3 MHz from center frequency.
[2] PAR (of output signal) at 0.
01 % probability on CCDF; PAR of input signal = 9.
5 dB at 0.
01 % probability on CCDF.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features „ 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.
5 A: ‹ Peak envelope power load power = 100 W ‹ Power gain = 21 dB ‹ Drain efficiency = 47 % ‹ Third order intermodulation distortion = −35 dBc „ DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.
5 A: ‹ Average output power = 24 W ‹ Power gain = 22 dB ‹ Drain efficiency = 33 % ‹ Third order intermodulation distortion = −34 dBc (4.
3 MHz from center frequency) NXP Semiconductors BLF871; BLF871S UHF power LDMOS transistor „ Integrated ESD protection „ Excellent ruggedness „ High power gain „ High efficiency „ Excellent reliability „ Easy power control „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications „ Communication transmitter applications in the UHF band „ Industrial application...



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