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BLF872

NXP Semiconductors
Part Number BLF872
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
Published Dec 13, 2010
Detailed Description BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General descripti...
Datasheet PDF File BLF872 PDF File

BLF872
BLF872

Overview
BLF872 UHF power LDMOS transistor Rev.
01 — 20 February 2006 Product data sheet 1.
Product profile 1.
1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.
9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efficiency ηD = 43 % x Third order intermodulation distortion IMD3 = −28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.
9 A: x Average output power PL(AV...


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