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K6F8016R6A

Samsung semiconductor
Part Number K6F8016R6A
Manufacturer Samsung semiconductor
Description CMOS SRAM
Published Mar 19, 2018
Detailed Description K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision...
Datasheet PDF File K6F8016R6A PDF File

K6F8016R6A
K6F8016R6A

Overview
K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
History 0.
0 Initial draft 0.
1 Revise - Change package type from FBGA to TBGA 1.
0 Finalize - Improved ICC1 from 3 to 2mA - Removed ICC, ISB 1.
01 Revise - Errata correction for finalized year 2000 to 2001 2.
0 Revise - Isb1 change : 15µA to 10µA - IDR change : 8µA to 6µA - Icc2 change : 25mA to 20mA for 70ns product 20mA to 18mA for 85ns product - Remove "A1 Index Mark" of 48-TBGA package bottom side - Changed 48-TBGA vertical dimension A1(typical) 0.
55mm to 0.
58mm A2(typical) 0.
35mm to 0.
32mm Draft Date August 21, 2000 Remark Preliminary September 28, 2000 Preliminary February 15, 2001 Final April 3, 2001 September 27, 2001 Revise The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to yourquestions about dev...


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