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K6F8016R6D

Samsung semiconductor
Part Number K6F8016R6D
Manufacturer Samsung semiconductor
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Published Apr 23, 2010
Detailed Description K6F8016R6D Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltag...
Datasheet PDF File K6F8016R6D PDF File

K6F8016R6D
K6F8016R6D


Overview
K6F8016R6D Family Document Title Preliminary CMOS SRAM www.
DataSheet4U.
com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
History 0.
0 0.
1 Initial draft Revised - Updated DC parameters (ICC1, ICC2, ISB1, IDR) - Deleted 55ns Speed bin Draft Date April 26, 2004 September 13, 2004 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to your questions about device.
If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 0.
1 September 2004 K6F8016R6D Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 1.
65~1.
95V • Low Data Retention Voltage: 1.
0V(Min) • Three State Outputs • Package Type: 48-FBGA-6.
00x7.
00 Preliminary CMOS SRAM www.
DataSheet4U.
com GENERAL DESCRIPTION The K6F8016R6D families are fabricated by SAMSUNG′s advanced full CMOS process technology.
The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.
The families also support low data retention voltage for battery back-up operation with low data retention current.
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F8016R6D-F Operating Temperature Industrial(-40~85°C) Vcc Range 1.
65~1.
95V Speed 70ns Standby (ISB1, Typ.
) 0.
5µA2) Operating (ICC1, Max) 2mA PKG Type 48-FBGA-6.
00x7.
00 1.
Typical value are measured at VCC=2.
0V, TA=25°C and not 100% tested.
PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen.
Precharge circuit.
A LB OE A0 A1 A2 CS2 Vcc Vss B I/O9 UB A3 A4 CS1 I/O1 Row Addresses C Row select I/O10 I/O11 A5 A6 I/O2 I/O3 Memory array 1024 rows 512×16 columns D Vss I/O12 A17 A7 I/O4 Vcc Data cont Data cont Data cont I/O Circuit Column select...


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