DatasheetsPDF.com

K6F8016R6B

Samsung semiconductor
Part Number K6F8016R6B
Manufacturer Samsung semiconductor
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Published Apr 23, 2010
Detailed Description K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS ...
Datasheet PDF File K6F8016R6B PDF File

K6F8016R6B
K6F8016R6B

Overview
K6F8016R6B Family Document Title CMOS SRAM www.
DataSheet4U.
com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
History 0.
0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.
0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to your questions about device.
If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.
0 October 2001 K6F8016R6B Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 1.
65~2.
2V • Low Data Retention Voltage: 1.
0V(Min) • Three State Outputs • Package Type: 48-TBGA-6.
00x7.
00 CMOS SRAM www.
DataSheet4U.
com GENERAL DESCRIPTION The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.
The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.
The families also support low data retention voltage for battery back-up operation with low data retention current.
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F8016R6B-F Operating Temperature Industrial(-40~85°C) Vcc Range 1.
65~2.
2V Speed 701)/85ns Standby (ISB1, Typ.
) 0.
5µ A2) Operating (ICC1, Max) 2mA PKG Type 48-TBGA-6.
00x7.
00 1.
The parameter is measured with 30pF test load.
2.
Typical value are measured at VCC=2.
0V, TA=25°C and not 100% tested.
PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen.
Precharge circuit.
A LB OE A0 A1 A2 CS2 Vcc Vss B I/O9 UB A3 A4 CS1 I/O1 Row Addresses C Row select I/O10 I/O11 A5 A6 I/O2 I/O3 Memory array 1024 rows 512×16 columns D Vss I/O12 A17 A7 I/O4 Vcc Data cont Data cont Data cont I/O Circuit Column select E Vcc I/O13 Vss A16 I/O5 Vss I/O1~I/O8 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)