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BDP947

Siemens Semiconductor Group
Part Number BDP947
Manufacturer Siemens Semiconductor Group
Description NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
Published Mar 23, 2005
Detailed Description BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain...
Datasheet PDF File BDP947 PDF File

BDP947
BDP947

Overview
BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 (PNP) Type BDP 947 BDP 949 Marking Ordering Code BDP 947 Q62702-D1335 BDP 949 Q62702-D1337 Pin Configuration 1=B 1=B 2=C 2=C 3=E 3=E 4=C 4=C Package SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 947 BDP 949 Collector-base voltage BDP 947 BDP 949 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 60 Unit V VCEO VCBO 45 60 VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS 5 3 5 200 500 3 150 - 65 .
.
.
+ 150 ≤ 42 ≤ 17 W °C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm2 Cu Semiconductor Group 1 Nov-28-1996 BDP 947 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO V 45 60 100 20 100 25 85 50 475 V 0.
5 1.
3 nA µA nA - IC = 10 mA, IB = 0 mA, BDP 947 IC = 10 mA, IB = 0 mA, BDP 949 Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 , BDP 947 IC = 100 µA, IB = 0 , BDP 949 Base-emitter breakdown voltage 45 60 V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO - VCB = 45 V, IE = 0 , TA = 25 °C VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V Collector-emitter saturation voltage 1) VCEsat VBEsat - IC = 2 A, IB = 0.
2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.
2 A AC Characteristics Transition frequency fT 100 25 - MHz pF - IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% ...


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