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BDP948

Siemens Semiconductor Group
Part Number BDP948
Manufacturer Siemens Semiconductor Group
Description PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
Published Mar 23, 2005
Detailed Description BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain ...
Datasheet PDF File BDP948 PDF File

BDP948
BDP948

Overview
BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 (NPN) Type BDP 948 BDP 950 Marking Ordering Code BDP 948 Q62702-D1336 BDP 950 Q62702-D1338 Pin Configuration 1=B 1=B 2=C 2=C 3=E 3=E 4=C 4=C Package SOT-223 SOT-223 Maximum Ratings Parameter Collector-emitter voltage BDP 948 BDP 950 Collector-base voltage BDP 948 BDP 950 Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 60 Unit V VCEO VCBO 45 60 VEBO IC ICM IB IBM Ptot Tj Tstg RthJA RthJS 5 3 5 200 500 3 150 - 65 .
.
.
+ 150 ≤ 42 ≤ 17 W °C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm2 Cu Semiconductor Group 1 Nov-28-1996 BDP 948 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO V 45 60 100 20 100 25 85 50 475 V 0.
5 1.
3 nA µA nA - IC = 10 mA, IB = 0 mA, BDP 948 IC = 10 mA, IB = 0 mA, BDP 950 Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IB = 0 , BDP 948 IC = 100 µA, IB = 0 , BDP 950 Base-emitter breakdown voltage 45 60 V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO - VCB = 45 V, IE = 0 , TA = 25 °C VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V Collector-emitter saturation voltage 1) VCEsat VBEsat - IC = 2 A, IB = 0.
2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.
2 A AC Characteristics Transition frequency fT 100 40 - MHz pF - IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% S...


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