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BDP947

Part Number	BDP947
Manufacturer	Infineon Technologies AG
Description	Silicon NPN Transistor
Published	Mar 23, 2005
Detailed Description	BDP947, BDP949 Silicon NPN Transistor For AF driver and output stages High collector current High current gain L...
Datasheet	BDP947 PDF File

Overview

BDP947, BDP949 Silicon NPN Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP948, BDP950 (PNP) 4 3 2 1 VPS05163 Type BDP947 BDP949 Maximum Ratings Parameter Marking BDP 947 BDP 949 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BDP 947 45 45 5 3 5 200 500 3 150 BDP 949 60 60 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg A mA W °C -65 .
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.
150 Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-06-2001 BDP947, BDP949 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 45 V, IE = 0 Collector cutoff current VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.
2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.
2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤=300µs, D = 2% Unit max.
V typ.
V(BR)CEO BDP947 BDP949 V(BR)CBO BDP947 BDP949 V(BR)EBO ICBO ICBO IEBO hFE 25 85 50 VCEsat VBEsat 475 0.
5 1.
3 45 60 5 100 20 100 45 60 - nA µA nA - V fT Ccb - 100 25 - MHz pF 2 Aug-06-2001 BDP947, BDP949 Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 3.
2 W...

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