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MMBT5550

GME
Part Number MMBT5550
Manufacturer GME
Description NPN General Purpose Amplifier
Published Apr 19, 2018
Detailed Description NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Ultra-small surface mount package. Pb Le...
Datasheet PDF File MMBT5550 PDF File

MMBT5550
MMBT5550

Overview
NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.
 Ultra-small surface mount package.
Pb Lead-free Production specification MMBT5550 APPLICATIONS  High voltage transistors.
 General purpose application.
ORDERING INFORMATION Type No.
Marking MMBT5550 M1F SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal resistance,Junction to ambient Junction and Storage Temperature 160 140 6 600 300 417 -55 to+150 Unit V V V mA mW ℃/W ℃ C117 Rev.
A www.
gmesemi.
com 1 Production specification NPN General Purpose Amplifier MMBT5550 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA IE=0 160 V Collector-emitter b...


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