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MMBT5550

Rectron
Part Number MMBT5550
Manufacturer Rectron
Description NPN Transistor
Published May 3, 2016
Detailed Description MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector c...
Datasheet PDF File MMBT5550 PDF File

MMBT5550
MMBT5550

Overview
MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.
225 W(Tamb=25OC) * Collector current ICM: 0.
6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC MECHANICA DATA *Case: Molded plastic *Epoxy: UL 94V-O rate flame retardant *Lead: MIL-STD-202E method 208C guaranteed *Mounting position: Any *Weight: 0.
008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATINGS Max.
Steady State Power Dissipation (1) @TA=25oC Max.
Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG ELECTRICAL CHARACTERISTICS (@ TA = 25OC unless otherwise noted) CHARACTERISTICS SYMBOL Thermal Resistance Junction to Ambient RQJA Notes : 1.
Alumina=0.
4*0.
3*0.
024 in.
99.
5% alumina.
2.
"Fully ROHS Compliant", "100% Sn plating (Pb-free)".
COLLECTOR 3 1 BASE 2 EMITTER 0.
006(0.
15) 0.
003(0.
08) SOT-23 0.
055(1.
40) 0.
047(1.
20) 0.
020(0.
50) 0.
012(0.
30) 0.
043(1.
10) 0.
035(0.
90) 0.
004(0.
10) 0.
000(0.
00) 0.
020(0.
50) 0.
012(0.
30) 0.
100(2.
55) 0.
089(2.
25) 0.
019(2.
00) 1 0.
071(1.
80) 0.
118(3.
00) 3 0.
110(2.
80) 2 Dimensions in inches and (millimeters) MIN.
- VALUE 225 150 -55 to +150 TYP.
- UNITS mW oC oC MAX.
417 UNITS oC/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC= 1.
0mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC= 0) Collector Cutoff Current (VCB= 100Vdc, IE= 0) (VCB= 100Vdc, IE= 0, TA= 100OC) Emitter Cutoff Current (VEB= 4.
0Vdc, IC= 0) ON CHARACTERISTICS DC Current Gain (IC= 1.
0mAdc, VCE= 5.
0Vdc) (IC= 10mAdc, VCE= 5.
0Vdc) (IC= 50mAdc, VCE= 5.
0Vdc) Collector-Emitter Saturation V...


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