DatasheetsPDF.com

MMBT5550

WEITRON
Part Number MMBT5550
Manufacturer WEITRON
Description High Voltage NPN Transistors
Published May 3, 2016
Detailed Description High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 60...
Datasheet PDF File MMBT5550 PDF File

MMBT5550
MMBT5550

Overview
High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.
0 600 556 300 2.
4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) 1.
0 , -100 , 10 , (3) MMBT5550 MMBT5551 MMBT5550 MMBT5551 WEITRON http://www.
weitron.
com.
tw 140 160 160 180 6.
0 MMBT5550 MMBT5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS Collector Cutoff Current ( VCB ( VCB ( VCB ( VCB 100 Vdc,IE= 120 Vdc, IE= 100 Vdc,IE= 100 Vdc,IE= ) ) ,TA= 100 C ) ,TA= 100 C ) Emitter Cutoff Current ( VEB 4.
0Vdc, IC=0 ) MMBT5550 MMBT5551 MMBT5550 MMBT5551 I CBO I EBO Max 100 50 100 50 50 Unit nAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (IC=1.
0 mAdc, VCE=5.
0 Vdc) (IC=10 mAdc, VCE=5.
0 Vdc) (IC=50 mAdc, VCE=5.
0 Vdc) Collector-Emitter Saturation Voltage (IC=10 mAdc, IB=1.
0mAdc) (IC=50 mAdc, IB=5.
0mAdc) MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 Base-Emitter Saturation Voltage (IC=10 mAdc, IB=1.
0mAdc) (IC=50 mAdc, IB=5.
0mAdc) Both Types MMBT5550 MMBT5551 1.
FR-5=1.
0 x 0.
75 x 0.
062 in 2.
Alumina=0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina 3.
Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.
0% hFE VCE(sat) VBE(sat) 60 80 60 80 20 30 - - - - 250 250 - Vdc 0.
15 0.
25 0.
20 Vdc 1.
0 1.
2 1.
0 WEITRON http://www.
weitron.
com.
tw hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBT5550 MMBT5551 500 300 200 100 50 30 20 10 7.
0 5.
0 0.
1 TJ = 125 C 25 C -55 C 0.
2 0.
3 0.
5 0.
7 1.
0 2.
0 3.
0 5.
0 7.
0 10 IC, COLLECTOR CURRENT (mA) FIG.
1 DC Current Gain VCE = 1.
0 V VCE = 5.
0 V 20 30 50 70 100 1.
0 0.
9 0.
8 0.
7 0.
6 IC = 1.
0 m A 0.
5 0.
4 0.
3 0.
2 0.
1 0 0.
005 0.
01 0.
02 10 m A 30 m A 0.
05 0.
1 0.
2 0.
5 1.
0 2.
0 IB , BASE CURRENT (mA) FIG.
2 Collector Saturation Region 100 m A 5.
0 10 20 50 101 VCE = 30 V 100 10-1 TJ = 125 C IC = I CES 10-2 75 C 10-3 REVERSE FORWARD 10-4 25 C 10-5 0.
4 0.
3 0.
2 0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)