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MMBT5551

Part Number	MMBT5551
Manufacturer	Formosa MS
Description	NPN Transistor
Published	Apr 19, 2018
Detailed Description	SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ide...
Datasheet	MMBT5551 PDF File

Overview

SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1.
BASE 2.
EMITTER - 3.
COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 0.
6 300 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure *Pulse test V(BR)C...

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